All MOSFET. FDB3502 Datasheet

 

FDB3502 Datasheet and Replacement


   Type Designator: FDB3502
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: TO263 D2PAK
 

 FDB3502 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDB3502 Datasheet (PDF)

 ..1. Size:354K  fairchild semi
 fdb3502.pdf pdf_icon

FDB3502

May 2008FDB3502tmN-Channel Power Trench MOSFET 75V, 14A, 47mFeatures General Description Max rDS(on) = 47m at VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has 100% UIL Testedbeen especially tailored to minimize the on-state resistance and RoHS Compliant yet maintain superior switching pe

 ..2. Size:392K  onsemi
 fdb3502.pdf pdf_icon

FDB3502

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2N6764JTX | IRFI840A | FDB44N25

Keywords - FDB3502 MOSFET datasheet

 FDB3502 cross reference
 FDB3502 equivalent finder
 FDB3502 lookup
 FDB3502 substitution
 FDB3502 replacement

 

 
Back to Top

 


 
.