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FDB3502 Specs and Replacement


   Type Designator: FDB3502
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
   Package: TO263 D2PAK
 

 FDB3502 substitution

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FDB3502 Specs

 ..1. Size:354K  fairchild semi
 fdb3502.pdf pdf_icon

FDB3502

May 2008 FDB3502 tm N-Channel Power Trench MOSFET 75V, 14A, 47m Features General Description Max rDS(on) = 47m at VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has 100% UIL Tested been especially tailored to minimize the on-state resistance and RoHS Compliant yet maintain superior switching pe... See More ⇒

 ..2. Size:392K  onsemi
 fdb3502.pdf pdf_icon

FDB3502

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDB2532F085 , FDB2552 , FDB2572 , FDB2614 , STU409DH , FDB2710 , FDB28N30TM , FDB33N25 , AON7410 , FDB3632 , STU40N01 , FDB3652F085 , STU410S , FDB3672F085 , STU411D , FDB3682 , STU412S .

History: FDB120N10

Keywords - FDB3502 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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