TMP6N90H Specs and Replacement

Type Designator: TMP6N90H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm

Package: TO220

TMP6N90H substitution

- MOSFET ⓘ Cross-Reference Search

 

TMP6N90H datasheet

 ..1. Size:525K  cn wuxi unigroup
 tma6n90h tmp6n90h.pdf pdf_icon

TMP6N90H

TMA6N90H,TMP6N90H Wuxi Unigroup Microelectronics CO.,LTD. 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA6N90H TO-220F A6N90... See More ⇒

 9.1. Size:1021K  trinnotech
 tmp6n70 tmpf6n70.pdf pdf_icon

TMP6N90H

TMP6N70(G)/TMPF6N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 5.0A ... See More ⇒

 9.2. Size:577K  trinnotech
 tmp6n65 tmpf6n65.pdf pdf_icon

TMP6N90H

TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax Features ID = 5.5A Low gate charge RDS(on) = 1.6 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP6N65 / TMPF6N65 TO-220 / TO-220F TMP6N65 / TMPF6N65 RoHS TMP6N65G / TMPF... See More ⇒

Detailed specifications: TMD2N60H, TMT2N60H, TMU2N60H, TMA4N60H, TMU4N60H, TMD4N60H, TMP4N60H, TMA6N90H, 5N65, TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H, TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H

Keywords - TMP6N90H MOSFET specs

 TMP6N90H cross reference

 TMP6N90H equivalent finder

 TMP6N90H pdf lookup

 TMP6N90H substitution

 TMP6N90H replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility