TMP6N90H Datasheet and Replacement
Type Designator: TMP6N90H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 119 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm
Package: TO220
TMP6N90H substitution
TMP6N90H Datasheet (PDF)
tma6n90h tmp6n90h.pdf

TMA6N90H,TMP6N90H Wuxi Unigroup Microelectronics CO.,LTD. 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA6N90H TO-220F A6N90
tmp6n70 tmpf6n70.pdf

TMP6N70(G)/TMPF6N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 5.0A
tmp6n65 tmpf6n65.pdf

TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax Features ID = 5.5A Low gate charge RDS(on) = 1.6 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP6N65 / TMPF6N65 TO-220 / TO-220F TMP6N65 / TMPF6N65 RoHS TMP6N65G / TMPF
Datasheet: TMD2N60H , TMT2N60H , TMU2N60H , TMA4N60H , TMU4N60H , TMD4N60H , TMP4N60H , TMA6N90H , IRF4905 , TMA7N60H , TMC7N60H , TMD7N60H , TMU7N60H , TMA7N65H , TMP7N65H , TMD7N65H , TMU7N65H .
History: IRLR7807ZCPBF | BSC060N10NS3G | BSO207PH | 2SK1507 | ME7804S-G | SVF12N65T | PJM3401PSC
Keywords - TMP6N90H MOSFET datasheet
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History: IRLR7807ZCPBF | BSC060N10NS3G | BSO207PH | 2SK1507 | ME7804S-G | SVF12N65T | PJM3401PSC



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