All MOSFET. TMP6N90H Datasheet

 

TMP6N90H Datasheet and Replacement


   Type Designator: TMP6N90H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm
   Package: TO220
 

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TMP6N90H Datasheet (PDF)

 ..1. Size:525K  cn wuxi unigroup
 tma6n90h tmp6n90h.pdf pdf_icon

TMP6N90H

TMA6N90H,TMP6N90H Wuxi Unigroup Microelectronics CO.,LTD. 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA6N90H TO-220F A6N90

 9.1. Size:1021K  trinnotech
 tmp6n70 tmpf6n70.pdf pdf_icon

TMP6N90H

TMP6N70(G)/TMPF6N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 5.0A

 9.2. Size:577K  trinnotech
 tmp6n65 tmpf6n65.pdf pdf_icon

TMP6N90H

TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax Features ID = 5.5A Low gate charge RDS(on) = 1.6 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP6N65 / TMPF6N65 TO-220 / TO-220F TMP6N65 / TMPF6N65 RoHS TMP6N65G / TMPF

Datasheet: TMD2N60H , TMT2N60H , TMU2N60H , TMA4N60H , TMU4N60H , TMD4N60H , TMP4N60H , TMA6N90H , 4435 , TMA7N60H , TMC7N60H , TMD7N60H , TMU7N60H , TMA7N65H , TMP7N65H , TMD7N65H , TMU7N65H .

History: APT20M18B2VR | SFP024N80I3 | IRF7342Q | R6547ENZ1 | SWF10N80D | IRFR4620TRPBF | SFP066N80AC3

Keywords - TMP6N90H MOSFET datasheet

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