TMU7N60H
MOSFET. Datasheet pdf. Equivalent
Type Designator: TMU7N60H
Marking Code: U7N60H
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 97
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO251
TMU7N60H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMU7N60H
Datasheet (PDF)
..1. Size:559K cn wuxi unigroup
tma7n60h tmc7n60h tmd7n60h tmu7n60h.pdf
TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM
7.1. Size:457K trinnotech
tmd7n60z tmu7n60z.pdf
TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A
8.1. Size:461K trinnotech
tmd7n65az tmu7n65az.pdf
TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A
8.2. Size:463K trinnotech
tmd7n65z tmu7n65z.pdf
TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A
8.3. Size:1062K cn wuxi unigroup
tma7n65h tmp7n65h tmd7n65h tmu7n65h.pdf
TMA7N65H, TMP7N65H, TMD7N65H, TMU7N65H Wuxi Unigroup Microelectronics Company650V N-Channel MOSFETFEATURESl Fast switchingl 100% avalanche testedl Improved dv/dt capabilityAPPLICATIONSl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply (UPS)l Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingTMA7N65H TO-220F A7N65HTM
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