TMB120N08A MOSFET. Datasheet pdf. Equivalent
Type Designator: TMB120N08A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 29.5 nS
Cossⓘ - Output Capacitance: 390 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO263
TMB120N08A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMB120N08A Datasheet (PDF)
..1. Size:446K cn wuxi unigroup
tmb120n08a tmp120n08a.pdf
tmb120n08a tmp120n08a.pdf
TMB120N08A,TMP120N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V)
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