TMB140N10A MOSFET. Datasheet pdf. Equivalent
Type Designator: TMB140N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 235 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 540 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO263
TMB140N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMB140N10A Datasheet (PDF)
..1. Size:451K cn wuxi unigroup
tmb140n10a.pdf
tmb140n10a.pdf
TMB140N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninter
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
