TMB140N10A PDF and Equivalents Search

 

TMB140N10A Specs and Replacement

Type Designator: TMB140N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 235 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO263

TMB140N10A substitution

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TMB140N10A datasheet

 ..1. Size:451K  cn wuxi unigroup
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TMB140N10A

TMB140N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninter... See More ⇒

Detailed specifications: TMD8N60H , TMU8N60H , TMA8N65H , TMC8N65H , TMD8N65H , TMU8N65H , TMB120N08A , TMP120N08A , 5N60 , TMB160N08A , TMP160N08A , TMB80N08A , TMP80N08A , TMD02N15AT , TMU02N15AT , TMP120N10A , TMP160N10A .

Keywords - TMB140N10A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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