All MOSFET. TMB140N10A Datasheet

 

TMB140N10A Datasheet and Replacement


   Type Designator: TMB140N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO263
 

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TMB140N10A Datasheet (PDF)

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TMB140N10A

TMB140N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninter

Datasheet: TMD8N60H , TMU8N60H , TMA8N65H , TMC8N65H , TMD8N65H , TMU8N65H , TMB120N08A , TMP120N08A , 10N65 , TMB160N08A , TMP160N08A , TMB80N08A , TMP80N08A , TMD02N15AT , TMU02N15AT , TMP120N10A , TMP160N10A .

History: FIR4N65F

Keywords - TMB140N10A MOSFET datasheet

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