All MOSFET. TMB160N08A Datasheet

 

TMB160N08A Datasheet and Replacement


   Type Designator: TMB160N08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 283 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO263
 

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TMB160N08A Datasheet (PDF)

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TMB160N08A

TMB160N08A,TMP160N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V)

Datasheet: TMU8N60H , TMA8N65H , TMC8N65H , TMD8N65H , TMU8N65H , TMB120N08A , TMP120N08A , TMB140N10A , SKD502T , TMP160N08A , TMB80N08A , TMP80N08A , TMD02N15AT , TMU02N15AT , TMP120N10A , TMP160N10A , TPA120R800A .

History: RF1S40N10LESM | IXTP5N60P | IPN70R2K0P7S | SIS862DN | IRFB830 | HSBA3094

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