TMB160N08A Specs and Replacement

Type Designator: TMB160N08A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 283 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO263

TMB160N08A substitution

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TMB160N08A datasheet

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 tmb160n08a tmp160n08a.pdf pdf_icon

TMB160N08A

TMB160N08A,TMP160N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: TMU8N60H, TMA8N65H, TMC8N65H, TMD8N65H, TMU8N65H, TMB120N08A, TMP120N08A, TMB140N10A, RFP50N06, TMP160N08A, TMB80N08A, TMP80N08A, TMD02N15AT, TMU02N15AT, TMP120N10A, TMP160N10A, TPA120R800A

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