All MOSFET. TMB80N08A Datasheet

 

TMB80N08A MOSFET. Datasheet pdf. Equivalent


   Type Designator: TMB80N08A
   Marking Code: 80N08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 84 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO263

 TMB80N08A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMB80N08A Datasheet (PDF)

 ..1. Size:377K  cn wuxi unigroup
 tmb80n08a.pdf

TMB80N08A TMB80N08A

TMB80N08A Wuxi Unigroup Microelectronics Company 80V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninterru

 ..2. Size:670K  cn wuxi unigroup
 tmb80n08a tmp80n08a.pdf

TMB80N08A TMB80N08A

TMB80N08A,TMP80N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET(Preliminary) Product Summary General Description Trench Power Technology VDS 80V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge Optimized for fast-switching Applications RDS(ON) (at VGS=10V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top