TMP80N08A Specs and Replacement

Type Designator: TMP80N08A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO220

TMP80N08A substitution

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TMP80N08A datasheet

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 tmb80n08a tmp80n08a.pdf pdf_icon

TMP80N08A

TMB80N08A,TMP80N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET(Preliminary) Product Summary General Description Trench Power Technology VDS 80V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge Optimized for fast-switching Applications RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: TMD8N65H, TMU8N65H, TMB120N08A, TMP120N08A, TMB140N10A, TMB160N08A, TMP160N08A, TMB80N08A, 18N50, TMD02N15AT, TMU02N15AT, TMP120N10A, TMP160N10A, TPA120R800A, TPB120R800A, TPW120R800A, TPA60R160M

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.