TMP80N08A Datasheet and Replacement
Type Designator: TMP80N08A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220
TMP80N08A substitution
TMP80N08A Datasheet (PDF)
tmb80n08a tmp80n08a.pdf

TMB80N08A,TMP80N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET(Preliminary) Product Summary General Description Trench Power Technology VDS 80V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge Optimized for fast-switching Applications RDS(ON) (at VGS=10V)
Datasheet: TMD8N65H , TMU8N65H , TMB120N08A , TMP120N08A , TMB140N10A , TMB160N08A , TMP160N08A , TMB80N08A , 75N75 , TMD02N15AT , TMU02N15AT , TMP120N10A , TMP160N10A , TPA120R800A , TPB120R800A , TPW120R800A , TPA60R160M .
History: 4N65KG-TF3T-T | LNG06R079 | SI3424DV | TTP115N08A | HFH7N80 | DMN2600UFB | 4N65KL-TA3-T
Keywords - TMP80N08A MOSFET datasheet
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History: 4N65KG-TF3T-T | LNG06R079 | SI3424DV | TTP115N08A | HFH7N80 | DMN2600UFB | 4N65KL-TA3-T



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