All MOSFET. TMD02N15AT Datasheet

 

TMD02N15AT Datasheet and Replacement


   Type Designator: TMD02N15AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252
 

 TMD02N15AT substitution

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TMD02N15AT Datasheet (PDF)

 ..1. Size:748K  cn wuxi unigroup
 tmd02n15at tmu02n15at.pdf pdf_icon

TMD02N15AT

TMD02N15AT, TMU02N15AT Wuxi Unigroup Microelectronics CO.,LTD. 150V N-Channel Trench MOSFET(Preliminary) Product Summary General Description VDS 150V Trench Power Technology Low RDS(ON) ID (at VGS=10V) 2A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: TMU8N65H , TMB120N08A , TMP120N08A , TMB140N10A , TMB160N08A , TMP160N08A , TMB80N08A , TMP80N08A , 2N60 , TMU02N15AT , TMP120N10A , TMP160N10A , TPA120R800A , TPB120R800A , TPW120R800A , TPA60R160M , TPP60R160M .

History: R6515ENZ | WMN25N80M3

Keywords - TMD02N15AT MOSFET datasheet

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