TMU02N15AT Specs and Replacement

Type Designator: TMU02N15AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO251

TMU02N15AT substitution

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TMU02N15AT datasheet

 ..1. Size:748K  cn wuxi unigroup
 tmd02n15at tmu02n15at.pdf pdf_icon

TMU02N15AT

TMD02N15AT, TMU02N15AT Wuxi Unigroup Microelectronics CO.,LTD. 150V N-Channel Trench MOSFET(Preliminary) Product Summary General Description VDS 150V Trench Power Technology Low RDS(ON) ID (at VGS=10V) 2A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: TMB120N08A, TMP120N08A, TMB140N10A, TMB160N08A, TMP160N08A, TMB80N08A, TMP80N08A, TMD02N15AT, IRF520, TMP120N10A, TMP160N10A, TPA120R800A, TPB120R800A, TPW120R800A, TPA60R160M, TPP60R160M, TPV60R160M

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