All MOSFET. TMU02N15AT Datasheet

 

TMU02N15AT Datasheet and Replacement


   Type Designator: TMU02N15AT
   Marking Code: 02N15A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO251
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TMU02N15AT Datasheet (PDF)

 ..1. Size:748K  cn wuxi unigroup
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TMU02N15AT

TMD02N15AT, TMU02N15AT Wuxi Unigroup Microelectronics CO.,LTD. 150V N-Channel Trench MOSFET(Preliminary) Product Summary General Description VDS 150V Trench Power Technology Low RDS(ON) ID (at VGS=10V) 2A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: GSM4850WS | FQD4N25TM

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