TPB120R800A Specs and Replacement

Type Designator: TPB120R800A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO263

TPB120R800A substitution

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TPB120R800A datasheet

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TPB120R800A

TPA120R800A, TPB120R800A, TPW120R800A Wuxi Unigroup Microelectronics Co.,Ltd 1200V Super-junction Power MOSFET Description 1200V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses de... See More ⇒

Detailed specifications: TMP160N08A, TMB80N08A, TMP80N08A, TMD02N15AT, TMU02N15AT, TMP120N10A, TMP160N10A, TPA120R800A, 2N60, TPW120R800A, TPA60R160M, TPP60R160M, TPV60R160M, TPW60R160M, TPA60R170MFD, TPA60R240M, TPB60R240M

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