TPB120R800A MOSFET. Datasheet pdf. Equivalent
Type Designator: TPB120R800A
Marking Code: 120R800A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 66 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO263
TPB120R800A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPB120R800A Datasheet (PDF)
tpa120r800a tpb120r800a tpw120r800a.pdf
TPA120R800A, TPB120R800A, TPW120R800A Wuxi Unigroup Microelectronics Co.,Ltd1200V Super-junction Power MOSFETDescription1200V super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses de
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