TPW120R800A Specs and Replacement
Type Designator: TPW120R800A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 66 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO247
TPW120R800A substitution
- MOSFET ⓘ Cross-Reference Search
TPW120R800A datasheet
tpa120r800a tpb120r800a tpw120r800a.pdf
TPA120R800A, TPB120R800A, TPW120R800A Wuxi Unigroup Microelectronics Co.,Ltd 1200V Super-junction Power MOSFET Description 1200V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses de... See More ⇒
Detailed specifications: TMB80N08A, TMP80N08A, TMD02N15AT, TMU02N15AT, TMP120N10A, TMP160N10A, TPA120R800A, TPB120R800A, 8N60, TPA60R160M, TPP60R160M, TPV60R160M, TPW60R160M, TPA60R170MFD, TPA60R240M, TPB60R240M, TPC60R240M
Keywords - TPW120R800A MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AUIRFB3004 | STQ3N45K3-AP
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