All MOSFET. TPW120R800A Datasheet

 

TPW120R800A Datasheet and Replacement


   Type Designator: TPW120R800A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO247
 

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TPW120R800A Datasheet (PDF)

 ..1. Size:683K  cn wuxi unigroup
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TPW120R800A

TPA120R800A, TPB120R800A, TPW120R800A Wuxi Unigroup Microelectronics Co.,Ltd1200V Super-junction Power MOSFETDescription1200V super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses de

Datasheet: TMB80N08A , TMP80N08A , TMD02N15AT , TMU02N15AT , TMP120N10A , TMP160N10A , TPA120R800A , TPB120R800A , IRFB31N20D , TPA60R160M , TPP60R160M , TPV60R160M , TPW60R160M , TPA60R170MFD , TPA60R240M , TPB60R240M , TPC60R240M .

History: HM25N03D | AO4294 | IRLR3717PBF | SSB65R600S2 | HX3415 | 2N6794U | AP4813GSM-HF

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