TPY65R1K5MB Specs and Replacement

Type Designator: TPY65R1K5MB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.7 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT223

TPY65R1K5MB substitution

- MOSFET ⓘ Cross-Reference Search

 

TPY65R1K5MB datasheet

 ..1. Size:698K  cn wuxi unigroup
 tpa65r1k5m tpd65r1k5m tpu65r1k5m tpy65r1k5mb.pdf pdf_icon

TPY65R1K5MB

TPA65R1K5M,TPD65R1K5M,TPU65R1K5M,TPY65R1K5MB Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction los... See More ⇒

Detailed specifications: TPP65R170M, TPV65R170M, TPW65R170M, TPA65R180D, TPA65R190MFD, TPA65R1K5M, TPD65R1K5M, TPU65R1K5M, 2N7000, TPA65R260M, TPB65R260M, TPC65R260M, TPP65R260M, TPV65R260M, TPW65R260M, TPA65R280D, TPB65R280D

Keywords - TPY65R1K5MB MOSFET specs

 TPY65R1K5MB cross reference

 TPY65R1K5MB equivalent finder

 TPY65R1K5MB pdf lookup

 TPY65R1K5MB substitution

 TPY65R1K5MB replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility