All MOSFET. TPY65R1K5MB Datasheet

 

TPY65R1K5MB Datasheet and Replacement


   Type Designator: TPY65R1K5MB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.7 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: SOT223
 

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TPY65R1K5MB Datasheet (PDF)

 ..1. Size:698K  cn wuxi unigroup
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TPY65R1K5MB

TPA65R1K5M,TPD65R1K5M,TPU65R1K5M,TPY65R1K5MB Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction los

Datasheet: TPP65R170M , TPV65R170M , TPW65R170M , TPA65R180D , TPA65R190MFD , TPA65R1K5M , TPD65R1K5M , TPU65R1K5M , 2N7000 , TPA65R260M , TPB65R260M , TPC65R260M , TPP65R260M , TPV65R260M , TPW65R260M , TPA65R280D , TPB65R280D .

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