TPY65R1K5MB MOSFET. Datasheet pdf. Equivalent
Type Designator: TPY65R1K5MB
Marking Code: 65R1K5M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 7.7 nS
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SOT223
TPY65R1K5MB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPY65R1K5MB Datasheet (PDF)
..1. Size:698K cn wuxi unigroup
tpa65r1k5m tpd65r1k5m tpu65r1k5m tpy65r1k5mb.pdf
tpa65r1k5m tpd65r1k5m tpu65r1k5m tpy65r1k5mb.pdf
TPA65R1K5M,TPD65R1K5M,TPU65R1K5M,TPY65R1K5MB Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction los
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
