TPR70R600M Datasheet and Replacement
Type Designator: TPR70R600M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO220FP-NL
TPR70R600M substitution
TPR70R600M Datasheet (PDF)
tpa70r600m tpb70r600m tpd70r600m tpr70r600m tpu70r600m.pdf

TPA70R600M,TPB70R600M,TPD70R600M,TPR70R600M,TPU70R600MWuxi Unigroup Microelectronics Co.,Ltd700V Super-junction Power MOSFETDescription700V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conductio
Datasheet: TPB70R450C , TPC70R450C , TPD70R450C , TPP70R450C , TPU70R450C , TPA70R600M , TPB70R600M , TPD70R600M , RU6888R , TPU70R600M , TPA73R190M , TPA73R300M , TPA73R400M , TPA80R180M , TPB80R180M , TPA80R250A , TPP80R250A .
History: IRFY440-T257 | APT47N60BCFG | HAT1038RJ | SSM3K335R | CS50N06P | SQ2337ES | NCV8408
Keywords - TPR70R600M MOSFET datasheet
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TPR70R600M replacement
History: IRFY440-T257 | APT47N60BCFG | HAT1038RJ | SSM3K335R | CS50N06P | SQ2337ES | NCV8408



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