TPR70R600M Specs and Replacement

Type Designator: TPR70R600M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO220FP-NL

TPR70R600M substitution

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TPR70R600M datasheet

 ..1. Size:1095K  cn wuxi unigroup
 tpa70r600m tpb70r600m tpd70r600m tpr70r600m tpu70r600m.pdf pdf_icon

TPR70R600M

TPA70R600M,TPB70R600M,TPD70R600M,TPR70R600M,TPU70R600M Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-junction Power MOSFET Description 700V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conductio... See More ⇒

Detailed specifications: TPB70R450C, TPC70R450C, TPD70R450C, TPP70R450C, TPU70R450C, TPA70R600M, TPB70R600M, TPD70R600M, AO3400A, TPU70R600M, TPA73R190M, TPA73R300M, TPA73R400M, TPA80R180M, TPB80R180M, TPA80R250A, TPP80R250A

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