All MOSFET. FDB5800 Datasheet

 

FDB5800 Datasheet and Replacement


   Type Designator: FDB5800
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 242 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO263 D2PAK
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FDB5800 Datasheet (PDF)

 ..1. Size:247K  fairchild semi
 fdb5800 f085.pdf pdf_icon

FDB5800

September 2005FDB5800N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mFeatures Applications rDS(ON) = 5.5m (Typ.), VGS = 5V, ID = 80A Motor/ Body Load Control High performance trench technology for extermely low ABS SystemsRdson Power Train Management Low Gate Charge Injection Systems High power and current handling capability DC-DC Converters and Off-Line

 ..2. Size:249K  fairchild semi
 fdb5800.pdf pdf_icon

FDB5800

September 2005FDB5800N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mFeatures Applications rDS(ON) = 5.5m (Typ.), VGS = 5V, ID = 80A Motor/ Body Load Control High performance trench technology for extermely low ABS SystemsRdson Power Train Management Low Gate Charge Injection Systems High power and current handling capability DC-DC Converters and Off-Line

Datasheet: FDB3682 , STU412S , FDB3860 , STU413S , FDB390N15A , FDB44N25 , FDB52N20 , STU417L , 13N50 , FDB8132F085 , STU326S , FDB8160F085 , STU312D , FDB8441 , FDB8441F085 , FDB8442 , FDB8442F085 .

History: FRF254D | DMNH10H028SCT | WML11N80M3 | RTF025N03 | TPDMN26D0UFB4 | WMB58N03T1 | IRLS4030

Keywords - FDB5800 MOSFET datasheet

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