FDB5800 Datasheet and Replacement
Type Designator: FDB5800
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 242 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO263 D2PAK
FDB5800 substitution
FDB5800 Datasheet (PDF)
fdb5800 f085.pdf
September 2005FDB5800N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mFeatures Applications rDS(ON) = 5.5m (Typ.), VGS = 5V, ID = 80A Motor/ Body Load Control High performance trench technology for extermely low ABS SystemsRdson Power Train Management Low Gate Charge Injection Systems High power and current handling capability DC-DC Converters and Off-Line
fdb5800.pdf
September 2005FDB5800N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mFeatures Applications rDS(ON) = 5.5m (Typ.), VGS = 5V, ID = 80A Motor/ Body Load Control High performance trench technology for extermely low ABS SystemsRdson Power Train Management Low Gate Charge Injection Systems High power and current handling capability DC-DC Converters and Off-Line
Datasheet: FDB3682 , STU412S , FDB3860 , STU413S , FDB390N15A , FDB44N25 , FDB52N20 , STU417L , 2SK3568 , FDB8132F085 , STU326S , FDB8160F085 , STU312D , FDB8441 , FDB8441F085 , FDB8442 , FDB8442F085 .
Keywords - FDB5800 MOSFET datasheet
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