FDB5800 Datasheet. Specs and Replacement

Type Designator: FDB5800  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 242 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO263 D2PAK

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FDB5800 datasheet

 ..1. Size:247K  fairchild semi
 fdb5800 f085.pdf pdf_icon

FDB5800

September 2005 FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7m Features Applications rDS(ON) = 5.5m (Typ.), VGS = 5V, ID = 80A Motor/ Body Load Control High performance trench technology for extermely low ABS Systems Rdson Power Train Management Low Gate Charge Injection Systems High power and current handling capability DC-DC Converters and Off-Line ... See More ⇒

 ..2. Size:249K  fairchild semi
 fdb5800.pdf pdf_icon

FDB5800

September 2005 FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7m Features Applications rDS(ON) = 5.5m (Typ.), VGS = 5V, ID = 80A Motor/ Body Load Control High performance trench technology for extermely low ABS Systems Rdson Power Train Management Low Gate Charge Injection Systems High power and current handling capability DC-DC Converters and Off-Line ... See More ⇒

Detailed specifications: FDB3682, STU412S, FDB3860, STU413S, FDB390N15A, FDB44N25, FDB52N20, STU417L, 4N60, FDB8132F085, STU326S, FDB8160F085, STU312D, FDB8441, FDB8441F085, FDB8442, FDB8442F085

Keywords - FDB5800 MOSFET specs

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