TPD80R750C MOSFET. Datasheet pdf. Equivalent
Type Designator: TPD80R750C
Marking Code: 80R750C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 26.5 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 52 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO252
TPD80R750C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPD80R750C Datasheet (PDF)
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