All MOSFET. TPD80R750C Datasheet

 

TPD80R750C Datasheet and Replacement


   Type Designator: TPD80R750C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO252
 

 TPD80R750C substitution

   - MOSFET ⓘ Cross-Reference Search

 

TPD80R750C Datasheet (PDF)

 ..1. Size:753K  cn wuxi unigroup
 tpa80r750c tpb80r750c tpc80r750c tpd80r750c tpp80r750c tpu80r750c.pdf pdf_icon

TPD80R750C

TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.1. Size:771K  cn wuxi unigroup
 tpd80r900m tpu80r900m.pdf pdf_icon

TPD80R750C

TPD80R900M,TPU80R900MWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro

Datasheet: TPW80R250A , TPA80R300C , TPB80R300C , TPP80R300C , TPW80R300C , TPA80R750C , TPB80R750C , TPC80R750C , AO3407 , TPP80R750C , TPU80R750C , TPB65R075DFD , TPP65R075DFD , TPW65R075DFD , TPB65R120M , TPP65R120M , TPR65R120M .

History: EKI07076

Keywords - TPD80R750C MOSFET datasheet

 TPD80R750C cross reference
 TPD80R750C equivalent finder
 TPD80R750C lookup
 TPD80R750C substitution
 TPD80R750C replacement

 

 
Back to Top

 


 
.