TPD80R750C Specs and Replacement
Type Designator: TPD80R750C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 52 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO252
TPD80R750C substitution
- MOSFET ⓘ Cross-Reference Search
TPD80R750C datasheet
tpa80r750c tpb80r750c tpc80r750c tpd80r750c tpp80r750c tpu80r750c.pdf
TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒
tpd80r900m tpu80r900m.pdf
TPD80R900M,TPU80R900M Wuxi Unigroup Microelectronics Co.,Ltd 800V Super-junction Power MOSFET Description 800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro... See More ⇒
Detailed specifications: TPW80R250A, TPA80R300C, TPB80R300C, TPP80R300C, TPW80R300C, TPA80R750C, TPB80R750C, TPC80R750C, AO4407A, TPP80R750C, TPU80R750C, TPB65R075DFD, TPP65R075DFD, TPW65R075DFD, TPB65R120M, TPP65R120M, TPR65R120M
Keywords - TPD80R750C MOSFET specs
TPD80R750C cross reference
TPD80R750C equivalent finder
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TPD80R750C substitution
TPD80R750C replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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