TPU80R750C Specs and Replacement

Type Designator: TPU80R750C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO251

TPU80R750C substitution

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TPU80R750C datasheet

 ..1. Size:753K  cn wuxi unigroup
 tpa80r750c tpb80r750c tpc80r750c tpd80r750c tpp80r750c tpu80r750c.pdf pdf_icon

TPU80R750C

TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒

 8.1. Size:771K  cn wuxi unigroup
 tpd80r900m tpu80r900m.pdf pdf_icon

TPU80R750C

TPD80R900M,TPU80R900M Wuxi Unigroup Microelectronics Co.,Ltd 800V Super-junction Power MOSFET Description 800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro... See More ⇒

Detailed specifications: TPB80R300C, TPP80R300C, TPW80R300C, TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, IRFP064N, TPB65R075DFD, TPP65R075DFD, TPW65R075DFD, TPB65R120M, TPP65R120M, TPR65R120M, TPW65R120M, TPB65R135MFD

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