TPD80R900M Specs and Replacement

Type Designator: TPD80R900M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO252

TPD80R900M substitution

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TPD80R900M datasheet

 ..1. Size:771K  cn wuxi unigroup
 tpd80r900m tpu80r900m.pdf pdf_icon

TPD80R900M

TPD80R900M,TPU80R900M Wuxi Unigroup Microelectronics Co.,Ltd 800V Super-junction Power MOSFET Description 800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro... See More ⇒

 8.1. Size:753K  cn wuxi unigroup
 tpa80r750c tpb80r750c tpc80r750c tpd80r750c tpp80r750c tpu80r750c.pdf pdf_icon

TPD80R900M

TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package... See More ⇒

Detailed specifications: TPD70R950M, TPD50R3K8D, TPD60R1K4M, TPU60R1K4M, TPD60R1K5MFD, TPD60R330M, TPD65R700MFD, TPD70R1K5M, IRFB4227, TPU80R900M, TPG60R070DFDH, TPG65R125MH, TPG65R360M, TPG70R600M, TPP50R250C, TPA50R250C, TPU50R250C

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