TPG60R070DFDH Specs and Replacement

Type Designator: TPG60R070DFDH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: DFN8X8

TPG60R070DFDH substitution

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TPG60R070DFDH datasheet

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TPG60R070DFDH

TPG60R070DFDH Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustne... See More ⇒

Detailed specifications: TPD60R1K4M, TPU60R1K4M, TPD60R1K5MFD, TPD60R330M, TPD65R700MFD, TPD70R1K5M, TPD80R900M, TPU80R900M, 10N60, TPG65R125MH, TPG65R360M, TPG70R600M, TPP50R250C, TPA50R250C, TPU50R250C, TPD50R250C, TPC50R250C

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.