All MOSFET. TPG60R070DFDH Datasheet

 

TPG60R070DFDH Datasheet and Replacement


   Type Designator: TPG60R070DFDH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: DFN8X8
 
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TPG60R070DFDH Datasheet (PDF)

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TPG60R070DFDH

TPG60R070DFDHWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDescription600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustne

Datasheet: TPD60R1K4M , TPU60R1K4M , TPD60R1K5MFD , TPD60R330M , TPD65R700MFD , TPD70R1K5M , TPD80R900M , TPU80R900M , IRFB4227 , TPG65R125MH , TPG65R360M , TPG70R600M , TPP50R250C , TPA50R250C , TPU50R250C , TPD50R250C , TPC50R250C .

History: KNU6610A

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