All MOSFET. TPG60R070DFDH Datasheet

 

TPG60R070DFDH MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPG60R070DFDH
   Marking Code: 60R070DFDH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 81 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: DFN8X8

 TPG60R070DFDH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPG60R070DFDH Datasheet (PDF)

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 tpg60r070dfdh.pdf

TPG60R070DFDH TPG60R070DFDH

TPG60R070DFDHWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDescription600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustne

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