TPG65R125MH MOSFET. Datasheet pdf. Equivalent
Type Designator: TPG65R125MH
Marking Code: 65R125M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 57 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: DFN8X8
TPG65R125MH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPG65R125MH Datasheet (PDF)
tpg65r125mh.pdf
TPG65R125MH Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustn
tpg65r360m.pdf
TPG65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness ma
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