TPG65R125MH Datasheet and Replacement
Type Designator: TPG65R125MH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: DFN8X8
TPG65R125MH substitution
TPG65R125MH Datasheet (PDF)
tpg65r125mh.pdf
TPG65R125MH Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustn
tpg65r360m.pdf
TPG65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness ma
Datasheet: TPU60R1K4M , TPD60R1K5MFD , TPD60R330M , TPD65R700MFD , TPD70R1K5M , TPD80R900M , TPU80R900M , TPG60R070DFDH , AON6414A , TPG65R360M , TPG70R600M , TPP50R250C , TPA50R250C , TPU50R250C , TPD50R250C , TPC50R250C , TPB50R250C .
History: TSK82N25M | MTH8N35 | BRCS120P04DP | NTLUS3A90PZTBG | WM06N03LE | AP6N6R5H | WVM9.5N100
Keywords - TPG65R125MH MOSFET datasheet
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TPG65R125MH replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: TSK82N25M | MTH8N35 | BRCS120P04DP | NTLUS3A90PZTBG | WM06N03LE | AP6N6R5H | WVM9.5N100
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