All MOSFET. TPG65R125MH Datasheet

 

TPG65R125MH Datasheet and Replacement


   Type Designator: TPG65R125MH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 219 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: DFN8X8
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TPG65R125MH Datasheet (PDF)

 ..1. Size:493K  cn wuxi unigroup
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TPG65R125MH

TPG65R125MH Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustn

 8.1. Size:562K  cn wuxi unigroup
 tpg65r360m.pdf pdf_icon

TPG65R125MH

TPG65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness ma

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History: AP09N90W | CED05N8 | MC08N005C | AON6794 | HFP5N60F | IRLR024 | BL10N70-A

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