TPG65R360M Datasheet and Replacement
Type Designator: TPG65R360M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 69.5 nS
Cossⓘ - Output Capacitance: 32 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: DFN5X6
TPG65R360M substitution
TPG65R360M Datasheet (PDF)
tpg65r360m.pdf

TPG65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness ma
tpg65r125mh.pdf

TPG65R125MH Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustn
Datasheet: TPD60R1K5MFD , TPD60R330M , TPD65R700MFD , TPD70R1K5M , TPD80R900M , TPU80R900M , TPG60R070DFDH , TPG65R125MH , IRFP250N , TPG70R600M , TPP50R250C , TPA50R250C , TPU50R250C , TPD50R250C , TPC50R250C , TPB50R250C , TPP50R400C .
Keywords - TPG65R360M MOSFET datasheet
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History: SQJ401EP | SFP730D



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