TPG65R360M Specs and Replacement

Type Designator: TPG65R360M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69.5 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: DFN5X6

TPG65R360M substitution

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TPG65R360M datasheet

 ..1. Size:562K  cn wuxi unigroup
 tpg65r360m.pdf pdf_icon

TPG65R360M

TPG65R360M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness ma... See More ⇒

 8.1. Size:493K  cn wuxi unigroup
 tpg65r125mh.pdf pdf_icon

TPG65R360M

TPG65R125MH Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustn... See More ⇒

Detailed specifications: TPD60R1K5MFD, TPD60R330M, TPD65R700MFD, TPD70R1K5M, TPD80R900M, TPU80R900M, TPG60R070DFDH, TPG65R125MH, IRFB4115, TPG70R600M, TPP50R250C, TPA50R250C, TPU50R250C, TPD50R250C, TPC50R250C, TPB50R250C, TPP50R400C

Keywords - TPG65R360M MOSFET specs

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