All MOSFET. TPG65R360M Datasheet

 

TPG65R360M Datasheet and Replacement


   Type Designator: TPG65R360M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 69.5 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: DFN5X6
 

 TPG65R360M substitution

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TPG65R360M Datasheet (PDF)

 ..1. Size:562K  cn wuxi unigroup
 tpg65r360m.pdf pdf_icon

TPG65R360M

TPG65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness ma

 8.1. Size:493K  cn wuxi unigroup
 tpg65r125mh.pdf pdf_icon

TPG65R360M

TPG65R125MH Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustn

Datasheet: TPD60R1K5MFD , TPD60R330M , TPD65R700MFD , TPD70R1K5M , TPD80R900M , TPU80R900M , TPG60R070DFDH , TPG65R125MH , IRFP250N , TPG70R600M , TPP50R250C , TPA50R250C , TPU50R250C , TPD50R250C , TPC50R250C , TPB50R250C , TPP50R400C .

History: IRFSL3107PBF | AON6206

Keywords - TPG65R360M MOSFET datasheet

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