TPP90R350A Specs and Replacement

Type Designator: TPP90R350A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO220

TPP90R350A substitution

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TPP90R350A datasheet

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TPP90R350A

TPP90R350A, TPA90R350A Wuxi Unigroup Microelectronics Company 900V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg D 100% avalanche tested RoHS compliant G APPLICATIONS S Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki... See More ⇒

Detailed specifications: TPA70R950C, TPU70R950C, TPD70R950C, TPC70R950C, TPB70R950C, TPP80R270M, TPV80R300C, TPC80R300C, IRFZ46N, TPA90R350A, TPR60R120MFD, TPW60R120MFD, TPV60R080CFD, TPW60R080CFD, TPV65R080C, TPW65R080C, TPW60R040MFD

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.