All MOSFET. TPP90R350A Datasheet

 

TPP90R350A Datasheet and Replacement


   Type Designator: TPP90R350A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO220
 

 TPP90R350A substitution

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TPP90R350A Datasheet (PDF)

 ..1. Size:362K  cn wuxi unigroup
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TPP90R350A

TPP90R350A, TPA90R350A Wuxi Unigroup Microelectronics Company 900V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg D 100% avalanche tested RoHS compliant G APPLICATIONS S Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki

Datasheet: TPA70R950C , TPU70R950C , TPD70R950C , TPC70R950C , TPB70R950C , TPP80R270M , TPV80R300C , TPC80R300C , STP65NF06 , TPA90R350A , TPR60R120MFD , TPW60R120MFD , TPV60R080CFD , TPW60R080CFD , TPV65R080C , TPW65R080C , TPW60R040MFD .

History: LNSA3400 | BRCS18N20DP | STP20NM60A | TJ10S04M3L | APM9988QB | IPG20N04S4L-07A

Keywords - TPP90R350A MOSFET datasheet

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