TPP90R350A Datasheet and Replacement
Type Designator: TPP90R350A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO220
TPP90R350A substitution
TPP90R350A Datasheet (PDF)
tpp90r350a tpa90r350a.pdf

TPP90R350A, TPA90R350A Wuxi Unigroup Microelectronics Company 900V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg D 100% avalanche tested RoHS compliant G APPLICATIONS S Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki
Datasheet: TPA70R950C , TPU70R950C , TPD70R950C , TPC70R950C , TPB70R950C , TPP80R270M , TPV80R300C , TPC80R300C , STP65NF06 , TPA90R350A , TPR60R120MFD , TPW60R120MFD , TPV60R080CFD , TPW60R080CFD , TPV65R080C , TPW65R080C , TPW60R040MFD .
History: 2SK1446 | PHD82NQ03LT | BUK9624-55A | SVF2N60CNF
Keywords - TPP90R350A MOSFET datasheet
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History: 2SK1446 | PHD82NQ03LT | BUK9624-55A | SVF2N60CNF



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