TPA90R350A MOSFET. Datasheet pdf. Equivalent
Type Designator: TPA90R350A
Marking Code: 90R350A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 62 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO220F
TPA90R350A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPA90R350A Datasheet (PDF)
..1. Size:362K cn wuxi unigroup
tpp90r350a tpa90r350a.pdf
tpp90r350a tpa90r350a.pdf
TPP90R350A, TPA90R350A Wuxi Unigroup Microelectronics Company 900V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg D 100% avalanche tested RoHS compliant G APPLICATIONS S Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki
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