TPA90R350A Datasheet and Replacement
Type Designator: TPA90R350A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO220F
TPA90R350A substitution
TPA90R350A Datasheet (PDF)
tpp90r350a tpa90r350a.pdf
TPP90R350A, TPA90R350A Wuxi Unigroup Microelectronics Company 900V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg D 100% avalanche tested RoHS compliant G APPLICATIONS S Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki
Datasheet: TPU70R950C , TPD70R950C , TPC70R950C , TPB70R950C , TPP80R270M , TPV80R300C , TPC80R300C , TPP90R350A , IRF830 , TPR60R120MFD , TPW60R120MFD , TPV60R080CFD , TPW60R080CFD , TPV65R080C , TPW65R080C , TPW60R040MFD , TPW60R080M .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
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