TPR60R120MFD Specs and Replacement

Type Designator: TPR60R120MFD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49.3 nS

Cossⓘ - Output Capacitance: 94.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO220FP-NL

TPR60R120MFD substitution

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TPR60R120MFD datasheet

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TPR60R120MFD

TPR60R120MFD,TPW60R120MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l... See More ⇒

Detailed specifications: TPD70R950C, TPC70R950C, TPB70R950C, TPP80R270M, TPV80R300C, TPC80R300C, TPP90R350A, TPA90R350A, IRLB3034, TPW60R120MFD, TPV60R080CFD, TPW60R080CFD, TPV65R080C, TPW65R080C, TPW60R040MFD, TPW60R080M, TPW60R090MFD

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