TPR60R120MFD MOSFET. Datasheet pdf. Equivalent
Type Designator: TPR60R120MFD
Marking Code: 60R120MFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 58.1 nC
trⓘ - Rise Time: 49.3 nS
Cossⓘ - Output Capacitance: 94.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO220FP-NL
TPR60R120MFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPR60R120MFD Datasheet (PDF)
tpr60r120mfd tpw60r120mfd.pdf
TPR60R120MFD,TPW60R120MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDescription600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l
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