All MOSFET. TPR60R120MFD Datasheet

 

TPR60R120MFD Datasheet and Replacement


   Type Designator: TPR60R120MFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 49.3 nS
   Cossⓘ - Output Capacitance: 94.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO220FP-NL
 

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TPR60R120MFD Datasheet (PDF)

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TPR60R120MFD

TPR60R120MFD,TPW60R120MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDescription600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l

Datasheet: TPD70R950C , TPC70R950C , TPB70R950C , TPP80R270M , TPV80R300C , TPC80R300C , TPP90R350A , TPA90R350A , 60N06 , TPW60R120MFD , TPV60R080CFD , TPW60R080CFD , TPV65R080C , TPW65R080C , TPW60R040MFD , TPW60R080M , TPW60R090MFD .

History: AP4438CGM-HF | AOLF66610 | P0920AD | QM3003K | MPSA65M990 | VSD013N10MS | OSG65R650F

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