All MOSFET. TPR60R120MFD Datasheet

 

TPR60R120MFD MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPR60R120MFD
   Marking Code: 60R120MFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 58.1 nC
   trⓘ - Rise Time: 49.3 nS
   Cossⓘ - Output Capacitance: 94.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO220FP-NL

 TPR60R120MFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPR60R120MFD Datasheet (PDF)

 ..1. Size:858K  cn wuxi unigroup
 tpr60r120mfd tpw60r120mfd.pdf

TPR60R120MFD TPR60R120MFD

TPR60R120MFD,TPW60R120MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDescription600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top