TPW70R100MFD Specs and Replacement

Type Designator: TPW70R100MFD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 391 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 123 nS

Cossⓘ - Output Capacitance: 106 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO247

TPW70R100MFD substitution

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TPW70R100MFD datasheet

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TPW70R100MFD

TPW70R100MFD Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-Junction Power MOSFET DESCRIPTION 700V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh... See More ⇒

Detailed specifications: TPW65R080C, TPW60R040MFD, TPW60R080M, TPW60R090MFD, TPW65R040M, TPW65R044MFD, TPW65R090M, TPW65R190MFD, IRF730, TPW80R200MFD, TPW80R300MFD, TPY70R1K5MB, TSB15N06A, TSB15N10A, TSD10N06AT, TSD120N10AT, TSP120N10AT

Keywords - TPW70R100MFD MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.