TPW70R100MFD MOSFET. Datasheet pdf. Equivalent
Type Designator: TPW70R100MFD
Marking Code: 70R100MFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 391 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 47 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 78 nC
trⓘ - Rise Time: 123 nS
Cossⓘ - Output Capacitance: 106 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO247
TPW70R100MFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPW70R100MFD Datasheet (PDF)
..1. Size:453K cn wuxi unigroup
tpw70r100mfd.pdf
tpw70r100mfd.pdf
TPW70R100MFD Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-Junction Power MOSFET DESCRIPTION 700V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh
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