All MOSFET. TPW70R100MFD Datasheet

 

TPW70R100MFD Datasheet and Replacement


   Type Designator: TPW70R100MFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 391 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 123 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO247
 

 TPW70R100MFD substitution

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TPW70R100MFD Datasheet (PDF)

 ..1. Size:453K  cn wuxi unigroup
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TPW70R100MFD

TPW70R100MFD Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-Junction Power MOSFET DESCRIPTION 700V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

Datasheet: TPW65R080C , TPW60R040MFD , TPW60R080M , TPW60R090MFD , TPW65R040M , TPW65R044MFD , TPW65R090M , TPW65R190MFD , BS170 , TPW80R200MFD , TPW80R300MFD , TPY70R1K5MB , TSB15N06A , TSB15N10A , TSD10N06AT , TSD120N10AT , TSP120N10AT .

History: AP2764AI-HF | AP2R803GMT-HF

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