TPY70R1K5MB MOSFET. Datasheet pdf. Equivalent
Type Designator: TPY70R1K5MB
Marking Code: 70R1K5M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 7.7 nS
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SOT223-2L
TPY70R1K5MB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPY70R1K5MB Datasheet (PDF)
..1. Size:273K cn wuxi unigroup
tpy70r1k5mb.pdf
tpy70r1k5mb.pdf
TPY70R1K5MB Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-Junction Power MOSFET DESCRIPTION 700V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Light
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