TPY70R1K5MB Specs and Replacement

Type Designator: TPY70R1K5MB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.7 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT223-2L

TPY70R1K5MB substitution

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TPY70R1K5MB datasheet

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TPY70R1K5MB

TPY70R1K5MB Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-Junction Power MOSFET DESCRIPTION 700V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Light... See More ⇒

Detailed specifications: TPW60R090MFD, TPW65R040M, TPW65R044MFD, TPW65R090M, TPW65R190MFD, TPW70R100MFD, TPW80R200MFD, TPW80R300MFD, IRF740, TSB15N06A, TSB15N10A, TSD10N06AT, TSD120N10AT, TSP120N10AT, TSG120N10AT, TSD12N06AT, TSG017N045AT

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