All MOSFET. TPY70R1K5MB Datasheet

 

TPY70R1K5MB Datasheet and Replacement


   Type Designator: TPY70R1K5MB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.7 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: SOT223-2L
 

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TPY70R1K5MB Datasheet (PDF)

 ..1. Size:273K  cn wuxi unigroup
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TPY70R1K5MB

TPY70R1K5MB Wuxi Unigroup Microelectronics Co.,Ltd 700V Super-Junction Power MOSFET DESCRIPTION 700V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Light

Datasheet: TPW60R090MFD , TPW65R040M , TPW65R044MFD , TPW65R090M , TPW65R190MFD , TPW70R100MFD , TPW80R200MFD , TPW80R300MFD , IRF740 , TSB15N06A , TSB15N10A , TSD10N06AT , TSD120N10AT , TSP120N10AT , TSG120N10AT , TSD12N06AT , TSG017N045AT .

History: RSH070P05TB1 | AP4435GJ | IPI034NE7N3G | SQJ465EP | CEK01N6G | CEH2310

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