TSD10N06AT Specs and Replacement

Type Designator: TSD10N06AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO252

TSD10N06AT substitution

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TSD10N06AT datasheet

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TSD10N06AT

TSD10N06AT Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa... See More ⇒

Detailed specifications: TPW65R090M, TPW65R190MFD, TPW70R100MFD, TPW80R200MFD, TPW80R300MFD, TPY70R1K5MB, TSB15N06A, TSB15N10A, IRF540N, TSD120N10AT, TSP120N10AT, TSG120N10AT, TSD12N06AT, TSG017N045AT, TSG10N06AT, TSG12N06AT, TSG12N10AT

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs