All MOSFET. TSD10N06AT Datasheet

 

TSD10N06AT Datasheet and Replacement


   Type Designator: TSD10N06AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO252
 

 TSD10N06AT substitution

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TSD10N06AT Datasheet (PDF)

 ..1. Size:474K  cn wuxi unigroup
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TSD10N06AT

TSD10N06AT Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa

Datasheet: TPW65R090M , TPW65R190MFD , TPW70R100MFD , TPW80R200MFD , TPW80R300MFD , TPY70R1K5MB , TSB15N06A , TSB15N10A , IRF540N , TSD120N10AT , TSP120N10AT , TSG120N10AT , TSD12N06AT , TSG017N045AT , TSG10N06AT , TSG12N06AT , TSG12N10AT .

History: AP9928GEM | IRHM9260 | IRHMB57Z60 | CEH2288 | FDD2512 | SQJ431EP | APT10M19SVFR

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