All MOSFET. TSD12N06AT Datasheet

 

TSD12N06AT Datasheet and Replacement


   Type Designator: TSD12N06AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252
 

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TSD12N06AT Datasheet (PDF)

 ..1. Size:473K  cn wuxi unigroup
 tsd12n06at.pdf pdf_icon

TSD12N06AT

TSD12N06AT Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa

 9.1. Size:692K  cn wuxi unigroup
 tsd120n10at tsp120n10at tsg120n10at.pdf pdf_icon

TSD12N06AT

TSD120N10AT,TSP120N10AT,TSG120N10ATWuxi Unigroup Microelectronics CO.,LTD.100V N-Channel SGT MOSFETGeneral DescriptionProduct SummaryVDS 100V l Trench Power SGT technologyID (at VGS =10V) 55Al Very low on-resistance RDS(ON)RDS(ON) (at VGS =10V)

Datasheet: TPW80R300MFD , TPY70R1K5MB , TSB15N06A , TSB15N10A , TSD10N06AT , TSD120N10AT , TSP120N10AT , TSG120N10AT , IRFZ44 , TSG017N045AT , TSG10N06AT , TSG12N06AT , TSG12N10AT , TSJ10N06AT , TSJ10N10AT , TSP15N06A , TSP15N10A .

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