All MOSFET. TSG017N045AT Datasheet

 

TSG017N045AT MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSG017N045AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 82 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 1213 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: DFN5X6

 TSG017N045AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSG017N045AT Datasheet (PDF)

 ..1. Size:298K  cn wuxi unigroup
 tsg017n045at.pdf

TSG017N045AT TSG017N045AT

TSG017N045AT Wuxi Unigroup Microelectronics CO.,LTD. 45V N-Channel SGT MOSFET General Description Product Summary Trench Power SGT technology VDS 45V Very low on-resistance RDS(ON) ID (at VGS =10V) 100A Low Gate Charge RDS(ON) (at VGS =10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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