TSG017N045AT Specs and Replacement

Type Designator: TSG017N045AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 1213 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: DFN5X6

TSG017N045AT substitution

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TSG017N045AT datasheet

 ..1. Size:298K  cn wuxi unigroup
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TSG017N045AT

TSG017N045AT Wuxi Unigroup Microelectronics CO.,LTD. 45V N-Channel SGT MOSFET General Description Product Summary Trench Power SGT technology VDS 45V Very low on-resistance RDS(ON) ID (at VGS =10V) 100A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

Detailed specifications: TPY70R1K5MB, TSB15N06A, TSB15N10A, TSD10N06AT, TSD120N10AT, TSP120N10AT, TSG120N10AT, TSD12N06AT, IRF640, TSG10N06AT, TSG12N06AT, TSG12N10AT, TSJ10N06AT, TSJ10N10AT, TSP15N06A, TSP15N10A, TTB105N06A

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