All MOSFET. TSG017N045AT Datasheet

 

TSG017N045AT Datasheet and Replacement


   Type Designator: TSG017N045AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 1213 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: DFN5X6
 

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TSG017N045AT Datasheet (PDF)

 ..1. Size:298K  cn wuxi unigroup
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TSG017N045AT

TSG017N045AT Wuxi Unigroup Microelectronics CO.,LTD. 45V N-Channel SGT MOSFET General Description Product Summary Trench Power SGT technology VDS 45V Very low on-resistance RDS(ON) ID (at VGS =10V) 100A Low Gate Charge RDS(ON) (at VGS =10V)

Datasheet: TPY70R1K5MB , TSB15N06A , TSB15N10A , TSD10N06AT , TSD120N10AT , TSP120N10AT , TSG120N10AT , TSD12N06AT , IRF640 , TSG10N06AT , TSG12N06AT , TSG12N10AT , TSJ10N06AT , TSJ10N10AT , TSP15N06A , TSP15N10A , TTB105N06A .

History: 3SK180-6 | FDG6332C-F085

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