All MOSFET. TSG10N06AT Datasheet

 

TSG10N06AT MOSFET. Datasheet pdf. Equivalent


   Type Designator: TSG10N06AT
   Marking Code: 10N06AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DFN5X6

 TSG10N06AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TSG10N06AT Datasheet (PDF)

 ..1. Size:481K  cn wuxi unigroup
 tsg10n06at.pdf

TSG10N06AT TSG10N06AT

TSG10N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Product Summary Features Trench Power DTMOS Technology VDS 60V Low RDS(ON) RDS(ON) (at VGS=10V)

 8.1. Size:341K  taiwansemi
 tsg10n120cn.pdf

TSG10N06AT TSG10N06AT

TSG10N120CN N-Channel IGBT with FRD. TO-3P Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 30 10.5 General Description The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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