TSG10N06AT MOSFET. Datasheet pdf. Equivalent
Type Designator: TSG10N06AT
Marking Code: 10N06AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 56.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 123 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: DFN5X6
TSG10N06AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSG10N06AT Datasheet (PDF)
tsg10n06at.pdf
TSG10N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Product Summary Features Trench Power DTMOS Technology VDS 60V Low RDS(ON) RDS(ON) (at VGS=10V)
tsg10n120cn.pdf
TSG10N120CN N-Channel IGBT with FRD. TO-3P Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 30 10.5 General Description The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
