TSG10N06AT Specs and Replacement

Type Designator: TSG10N06AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: DFN5X6

TSG10N06AT substitution

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TSG10N06AT datasheet

 ..1. Size:481K  cn wuxi unigroup
 tsg10n06at.pdf pdf_icon

TSG10N06AT

TSG10N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Product Summary Features Trench Power DTMOS Technology VDS 60V Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:341K  taiwansemi
 tsg10n120cn.pdf pdf_icon

TSG10N06AT

TSG10N120CN N-Channel IGBT with FRD. TO-3P Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 30 10.5 General Description The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.... See More ⇒

Detailed specifications: TSB15N06A, TSB15N10A, TSD10N06AT, TSD120N10AT, TSP120N10AT, TSG120N10AT, TSD12N06AT, TSG017N045AT, IRF1404, TSG12N06AT, TSG12N10AT, TSJ10N06AT, TSJ10N10AT, TSP15N06A, TSP15N10A, TTB105N06A, TTP105N06A

Keywords - TSG10N06AT MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.