TSG12N10AT Datasheet and Replacement. Cross Reference Search

TSG12N10AT Datasheet (PDF)

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TSG12N10AT Wuxi Unigroup Microelectronics Company 100V N-Channel DTMOS FEATURES Trench Power DTMOS Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device P

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TSG12N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Product Summary Features Trench Power DTMOS Technology VDS 60V Low RDS(ON) RDS(ON) (at VGS=10V)

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TSD120N10AT,TSP120N10AT,TSG120N10ATWuxi Unigroup Microelectronics CO.,LTD.100V N-Channel SGT MOSFETGeneral DescriptionProduct SummaryVDS 100V l Trench Power SGT technologyID (at VGS =10V) 55Al Very low on-resistance RDS(ON)RDS(ON) (at VGS =10V)

Datasheet: TSD10N06AT , TSD120N10AT , TSP120N10AT , TSG120N10AT , TSD12N06AT , TSG017N045AT , TSG10N06AT , TSG12N06AT , IRF640N , TSJ10N06AT , TSJ10N10AT , TSP15N06A , TSP15N10A , TTB105N06A , TTP105N06A , TTB105N08A , TTP105N08A .