TSG12N10AT Specs and Replacement

Type Designator: TSG12N10AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 153 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: DFN5X6

TSG12N10AT substitution

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TSG12N10AT datasheet

 ..1. Size:456K  cn wuxi unigroup
 tsg12n10at.pdf pdf_icon

TSG12N10AT

TSG12N10AT Wuxi Unigroup Microelectronics Company 100V N-Channel DTMOS FEATURES Trench Power DTMOS Technology Low RDS(ON) Low Gate Charge Optimized for Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device P... See More ⇒

 8.1. Size:481K  cn wuxi unigroup
 tsg12n06at.pdf pdf_icon

TSG12N10AT

TSG12N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Product Summary Features Trench Power DTMOS Technology VDS 60V Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:692K  cn wuxi unigroup
 tsd120n10at tsp120n10at tsg120n10at.pdf pdf_icon

TSG12N10AT

TSD120N10AT,TSP120N10AT,TSG120N10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V N-Channel SGT MOSFET General Description Product Summary VDS 100V l Trench Power SGT technology ID (at VGS =10V) 55A l Very low on-resistance RDS(ON) RDS(ON) (at VGS =10V) ... See More ⇒

Detailed specifications: TSD10N06AT, TSD120N10AT, TSP120N10AT, TSG120N10AT, TSD12N06AT, TSG017N045AT, TSG10N06AT, TSG12N06AT, IRFB4110, TSJ10N06AT, TSJ10N10AT, TSP15N06A, TSP15N10A, TTB105N06A, TTP105N06A, TTB105N08A, TTP105N08A

Keywords - TSG12N10AT MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs