TTB105N08A Specs and Replacement

Type Designator: TTB105N08A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 195 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO263

TTB105N08A substitution

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TTB105N08A datasheet

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TTB105N08A

TTB105N08A,TTP105N08A Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) Product Summary General Description Trench Power Technology VDS 85V Low RDS(ON) ID (at VGS=10V) 105A Low Gate Charge Optimized for fast-switching Applications RDS(ON) (at VGS=10V) ... See More ⇒

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TTB105N08A

TTB105N06A,TTP105N06A Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET General Description Product Summary Trench Power technology VDS 60V Low RDS(ON) ID (at VGS =10V) 105A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

 9.1. Size:178K  toshiba
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TTB105N08A

TTB1020B Bipolar Transistors Silicon PNP Triple-Diffused Type TTB1020B TTB1020B TTB1020B TTB1020B 1. Applications 1. Applications 1. Applications 1. Applications High-Current Switching Hammer Drivers 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage VCE(sat) =... See More ⇒

 9.2. Size:639K  toshiba
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TTB105N08A

TTB1067B PNP ( ) TTB1067B TTB1067B TTB1067B TTB1067B 1. 1. 1. 1. 2. 2. 2. 2. (1) ... See More ⇒

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Detailed specifications: TSG12N06AT, TSG12N10AT, TSJ10N06AT, TSJ10N10AT, TSP15N06A, TSP15N10A, TTB105N06A, TTP105N06A, AON6414A, TTP105N08A, TTB115N08A, TTP115N08A, TTB115N08AA, TTP115N08AA, TTB118N08A, TTP118N08A, TTB135N68A

Keywords - TTB105N08A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.