All MOSFET. TTB115N08A Datasheet

 

TTB115N08A Datasheet and Replacement


   Type Designator: TTB115N08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 115 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 302 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO263
 

 TTB115N08A substitution

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TTB115N08A Datasheet (PDF)

 ..1. Size:445K  cn wuxi unigroup
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TTB115N08A

TTB115N08A,TTP115N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V)

 0.1. Size:811K  cn wuxi unigroup
 ttb115n08aa ttp115n08aa.pdf pdf_icon

TTB115N08A

TTB115N08AA,TTP115N08AA Wuxi Unigroup Microelectronics CO.,LTD. 85V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 85V Low RDS(ON) ID (at VGS =10V) 115A Low Gate Charge RDS(ON) (at VGS =10V)

 9.1. Size:790K  cn wuxi unigroup
 ttb118n08a ttp118n08a.pdf pdf_icon

TTB115N08A

TTB118N08A,TTP118N08A Wuxi Unigroup Microelectronics CO.,LTD. 82V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 82V Low RDS(ON) ID (at VGS =10V) 118A Low Gate Charge RDS(ON) (at VGS =10V)

Datasheet: TSJ10N06AT , TSJ10N10AT , TSP15N06A , TSP15N10A , TTB105N06A , TTP105N06A , TTB105N08A , TTP105N08A , IRF9540 , TTP115N08A , TTB115N08AA , TTP115N08AA , TTB118N08A , TTP118N08A , TTB135N68A , TTP135N68A , TTB145N06A .

History: TTP105N06A | 2SK3575-Z

Keywords - TTB115N08A MOSFET datasheet

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