TTB135N68A Specs and Replacement

Type Designator: TTB135N68A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 135 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 443 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO263

TTB135N68A substitution

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TTB135N68A datasheet

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TTB135N68A

TTB135N68A,TTP135N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 68V Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: TTB105N08A, TTP105N08A, TTB115N08A, TTP115N08A, TTB115N08AA, TTP115N08AA, TTB118N08A, TTP118N08A, IRF9540, TTP135N68A, TTB145N06A, TTP145N06A, TTB145N08A, TTP145N08A, TTB30P10AT, TTD30P10AT, TTP30P10AT

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.