TTD30P10AT Specs and Replacement
Type Designator: TTD30P10AT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 625 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: TO252
TTD30P10AT substitution
- MOSFET ⓘ Cross-Reference Search
TTD30P10AT datasheet
ttd30p10at ttp30p10at.pdf
TTD30P10AT, TTP30P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Load Switches Battery Switch Device Marking and Package Information Device Package Marking TTP30P10AT TO-220 30P10AT TTD30P10AT TO... See More ⇒
ttb30p10at ttd30p10at ttp30p10at.pdf
TTB30P10AT,TTD30P10AT,TTP30P10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -100V Low RDS(ON) ID (at VGS =-10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V) ... See More ⇒
ttd30p03at.pdf
TTD30P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V) ... See More ⇒
Detailed specifications: TTP118N08A, TTB135N68A, TTP135N68A, TTB145N06A, TTP145N06A, TTB145N08A, TTP145N08A, TTB30P10AT, IRLB4132, TTP30P10AT, TTB85N08A, TTP85N08A, TTB85N08AA, TTP85N08AA, TTB95N68A, TTD95N68A, TTP95N68A
Keywords - TTD30P10AT MOSFET specs
TTD30P10AT cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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