TTD30P10AT Datasheet and Replacement
Type Designator: TTD30P10AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 625 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: TO252
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TTD30P10AT Datasheet (PDF)
ttd30p10at ttp30p10at.pdf

TTD30P10AT, TTP30P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Load Switches Battery Switch Device Marking and Package Information Device Package Marking TTP30P10AT TO-220 30P10AT TTD30P10AT TO
ttb30p10at ttd30p10at ttp30p10at.pdf

TTB30P10AT,TTD30P10AT,TTP30P10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -100V Low RDS(ON) ID (at VGS =-10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V)
ttd30p03at.pdf

TTD30P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: UF3205L-T3P-T | RZL025P01TR | SMF14N65 | ECH8662 | IXTH40N30 | TTB85N08A | RQ6C050UN
Keywords - TTD30P10AT MOSFET datasheet
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History: UF3205L-T3P-T | RZL025P01TR | SMF14N65 | ECH8662 | IXTH40N30 | TTB85N08A | RQ6C050UN



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