All MOSFET. TTD30P10AT Datasheet

 

TTD30P10AT Datasheet and Replacement


   Type Designator: TTD30P10AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 625 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TO252
 

 TTD30P10AT substitution

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TTD30P10AT Datasheet (PDF)

 ..1. Size:453K  cn wuxi unigroup
 ttd30p10at ttp30p10at.pdf pdf_icon

TTD30P10AT

TTD30P10AT, TTP30P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Load Switches Battery Switch Device Marking and Package Information Device Package Marking TTP30P10AT TO-220 30P10AT TTD30P10AT TO

 ..2. Size:798K  cn wuxi unigroup
 ttb30p10at ttd30p10at ttp30p10at.pdf pdf_icon

TTD30P10AT

TTB30P10AT,TTD30P10AT,TTP30P10AT Wuxi Unigroup Microelectronics CO.,LTD. 100V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -100V Low RDS(ON) ID (at VGS =-10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V)

 8.1. Size:681K  cn wuxi unigroup
 ttd30p03at.pdf pdf_icon

TTD30P10AT

TTD30P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =10V) -30A Low Gate Charge RDS(ON) (at VGS =-10V)

Datasheet: TTP118N08A , TTB135N68A , TTP135N68A , TTB145N06A , TTP145N06A , TTB145N08A , TTP145N08A , TTB30P10AT , 5N60 , TTP30P10AT , TTB85N08A , TTP85N08A , TTB85N08AA , TTP85N08AA , TTB95N68A , TTD95N68A , TTP95N68A .

History: TTP115N68A

Keywords - TTD30P10AT MOSFET datasheet

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