TTD95N68A Specs and Replacement

Type Designator: TTD95N68A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 94 nS

Cossⓘ - Output Capacitance: 274 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO252

TTD95N68A substitution

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TTD95N68A datasheet

 ..1. Size:527K  cn wuxi unigroup
 ttb95n68a ttd95n68a ttp95n68a.pdf pdf_icon

TTD95N68A

TTB95N68A,TTD95N68A,TTP95N68A Wuxi Unigroup Microelectronics CO.,LTD. 68V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 68V Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: TTB30P10AT, TTD30P10AT, TTP30P10AT, TTB85N08A, TTP85N08A, TTB85N08AA, TTP85N08AA, TTB95N68A, K4145, TTP95N68A, TTD100N04AT, TTP100N04AT, TTD120N03AT, TTP120N03AT, TTD120N04AT, TTP120N04AT, TTD135N68A

Keywords - TTD95N68A MOSFET specs

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