TTP120N04AT Datasheet and Replacement
Type Designator: TTP120N04AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 587 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO220
TTP120N04AT substitution
TTP120N04AT Datasheet (PDF)
ttd120n04at ttp120n04at.pdf

TTD120N04AT, TTP120N04AT Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and
ttd120n03at ttp120n03at.pdf

TTD120N03AT, TTP120N03AT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package
Datasheet: TTB95N68A , TTD95N68A , TTP95N68A , TTD100N04AT , TTP100N04AT , TTD120N03AT , TTP120N03AT , TTD120N04AT , AON7506 , TTD135N68A , TTD160N03GT , TTP160N03GT , TTD18P10AT , TTP18P10AT , TTD20N04AT , TTD30P03AT , TTD35N02AV .
History: TTD120N04AT | HTD035N03 | AFN3309WS | DMN24H11DS | IRFS9522 | AUIRF8736M2 | AM4426N
Keywords - TTP120N04AT MOSFET datasheet
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History: TTD120N04AT | HTD035N03 | AFN3309WS | DMN24H11DS | IRFS9522 | AUIRF8736M2 | AM4426N



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