TTP160N03GT MOSFET. Datasheet pdf. Equivalent
Type Designator: TTP160N03GT
Marking Code: 160N03GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 160 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 160 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 904 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0021 Ohm
Package: TO220
TTP160N03GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TTP160N03GT Datasheet (PDF)
..1. Size:448K cn wuxi unigroup
ttd160n03gt ttp160n03gt.pdf
ttd160n03gt ttp160n03gt.pdf
TTD160N03GT, TTP160N03GT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCEP40T20A
