TTP160N03GT Specs and Replacement

Type Designator: TTP160N03GT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 143 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 904 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: TO220

TTP160N03GT substitution

- MOSFET ⓘ Cross-Reference Search

 

TTP160N03GT datasheet

 ..1. Size:448K  cn wuxi unigroup
 ttd160n03gt ttp160n03gt.pdf pdf_icon

TTP160N03GT

TTD160N03GT, TTP160N03GT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package ... See More ⇒

Detailed specifications: TTD100N04AT, TTP100N04AT, TTD120N03AT, TTP120N03AT, TTD120N04AT, TTP120N04AT, TTD135N68A, TTD160N03GT, NCEP15T14, TTD18P10AT, TTP18P10AT, TTD20N04AT, TTD30P03AT, TTD35N02AV, TTD40P03AT, TTD50P04AT, TTD60N03QT

Keywords - TTP160N03GT MOSFET specs

 TTP160N03GT cross reference

 TTP160N03GT equivalent finder

 TTP160N03GT pdf lookup

 TTP160N03GT substitution

 TTP160N03GT replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.