TTD18P10AT MOSFET. Datasheet pdf. Equivalent
Type Designator: TTD18P10AT
Marking Code: 18P10AT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 113 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 73 nS
Drain-Source Capacitance (Cd): 102 pF
Maximum Drain-Source On-State Resistance (Rds): 0.096 Ohm
Package: TO252
TTD18P10AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TTD18P10AT Datasheet (PDF)
..1. Size:451K cn wuxi unigroup
ttd18p10at ttp18p10at.pdf
ttd18p10at ttp18p10at.pdf
TTD18P10AT, TTP18P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Load Switches Battery Switch Device Marking and Package Information Device Package Marking TTP18P10AT TO-220 18P10AT TTD18P10AT TO
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
