TTD18P10AT MOSFET. Datasheet pdf. Equivalent
Type Designator: TTD18P10AT
Marking Code: 18P10AT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 113 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 73 nS
Drain-Source Capacitance (Cd): 102 pF
Maximum Drain-Source On-State Resistance (Rds): 0.096 Ohm
Package: TO252
TTD18P10AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TTD18P10AT Datasheet (PDF)
..1. Size:451K cn wuxi unigroup
ttd18p10at ttp18p10at.pdf
ttd18p10at ttp18p10at.pdf
TTD18P10AT, TTP18P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Load Switches Battery Switch Device Marking and Package Information Device Package Marking TTP18P10AT TO-220 18P10AT TTD18P10AT TO
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