All MOSFET. TTD18P10AT Datasheet

 

TTD18P10AT Datasheet and Replacement


   Type Designator: TTD18P10AT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 102 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm
   Package: TO252
 

 TTD18P10AT substitution

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TTD18P10AT Datasheet (PDF)

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TTD18P10AT

TTD18P10AT, TTP18P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Load Switches Battery Switch Device Marking and Package Information Device Package Marking TTP18P10AT TO-220 18P10AT TTD18P10AT TO

Datasheet: TTP100N04AT , TTD120N03AT , TTP120N03AT , TTD120N04AT , TTP120N04AT , TTD135N68A , TTD160N03GT , TTP160N03GT , IRFP250 , TTP18P10AT , TTD20N04AT , TTD30P03AT , TTD35N02AV , TTD40P03AT , TTD50P04AT , TTD60N03QT , TTD65N04AT .

History: NCE60ND45G | NCE60NF200T | H07N65E | PMDT290UCE | TTP18P10AT | SLD70R420S2 | S40N09RP

Keywords - TTD18P10AT MOSFET datasheet

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