All MOSFET. TTD20N04AT Datasheet

 

TTD20N04AT MOSFET. Datasheet pdf. Equivalent


   Type Designator: TTD20N04AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 16.7 nC
   trⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO252

 TTD20N04AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TTD20N04AT Datasheet (PDF)

 ..1. Size:729K  cn wuxi unigroup
 ttd20n04at.pdf

TTD20N04AT TTD20N04AT

TTD20N04AT Wuxi Unigroup Microelectronics CO.,LTD. 40V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 40V Low RDS(ON) ID (at VGS =10V) 20A Low Gate Charge RDS(ON) (at VGS =10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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