TTD20N04AT Specs and Replacement

Type Designator: TTD20N04AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO252

TTD20N04AT substitution

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TTD20N04AT datasheet

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TTD20N04AT

TTD20N04AT Wuxi Unigroup Microelectronics CO.,LTD. 40V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 40V Low RDS(ON) ID (at VGS =10V) 20A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

Detailed specifications: TTP120N03AT, TTD120N04AT, TTP120N04AT, TTD135N68A, TTD160N03GT, TTP160N03GT, TTD18P10AT, TTP18P10AT, IRFP450, TTD30P03AT, TTD35N02AV, TTD40P03AT, TTD50P04AT, TTD60N03QT, TTD65N04AT, TTD70N04AT, TTP70N04AT

Keywords - TTD20N04AT MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.