TTD35N02AV Specs and Replacement

Type Designator: TTD35N02AV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 183 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

TTD35N02AV substitution

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TTD35N02AV datasheet

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TTD35N02AV

TTD35N02AV Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 20V Low RDS(ON) ID (at VGS =10V) 35A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

Detailed specifications: TTP120N04AT, TTD135N68A, TTD160N03GT, TTP160N03GT, TTD18P10AT, TTP18P10AT, TTD20N04AT, TTD30P03AT, AO4407, TTD40P03AT, TTD50P04AT, TTD60N03QT, TTD65N04AT, TTD70N04AT, TTP70N04AT, TTD85N03AT, TTD90N03AT

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs