TTD35N02AV Datasheet and Replacement
Type Designator: TTD35N02AV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 183 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO252
TTD35N02AV Datasheet (PDF)
ttd35n02av.pdf

TTD35N02AV Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 20V Low RDS(ON) ID (at VGS =10V) 35A Low Gate Charge RDS(ON) (at VGS =10V)
Datasheet: TTP120N04AT , TTD135N68A , TTD160N03GT , TTP160N03GT , TTD18P10AT , TTP18P10AT , TTD20N04AT , TTD30P03AT , P60NF06 , TTD40P03AT , TTD50P04AT , TTD60N03QT , TTD65N04AT , TTD70N04AT , TTP70N04AT , TTD85N03AT , TTD90N03AT .
Keywords - TTD35N02AV MOSFET datasheet
TTD35N02AV cross reference
TTD35N02AV equivalent finder
TTD35N02AV lookup
TTD35N02AV substitution
TTD35N02AV replacement



LIST
Last Update
MOSFET: JMTE6888A | JMTE3003A | JMTE3002B | JMTE068N07A | JMTE060N06A | JMTE035N06D | JMTE035N04A | JMTE025N04D | JMTE018N03A | JMTD3134K | JMTD2N7002KS | JMSL1509PG | JMSL10A13P | JMSL10A13L | JMSL10A13K | JMSL1010PU
Popular searches
mn2488 | irfb438 | mj21193g | irf3710 pinout | irf9530 datasheet | mj21194 | oc71 transistor | 2n3440