All MOSFET. TTD35N02AV Datasheet

 

TTD35N02AV Datasheet and Replacement


   Type Designator: TTD35N02AV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 
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TTD35N02AV Datasheet (PDF)

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TTD35N02AV

TTD35N02AV Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 20V Low RDS(ON) ID (at VGS =10V) 35A Low Gate Charge RDS(ON) (at VGS =10V)

Datasheet: TTP120N04AT , TTD135N68A , TTD160N03GT , TTP160N03GT , TTD18P10AT , TTP18P10AT , TTD20N04AT , TTD30P03AT , P60NF06 , TTD40P03AT , TTD50P04AT , TTD60N03QT , TTD65N04AT , TTD70N04AT , TTP70N04AT , TTD85N03AT , TTD90N03AT .

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