All MOSFET. TTD50P04AT Datasheet

 

TTD50P04AT Datasheet and Replacement


   Type Designator: TTD50P04AT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO252
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TTD50P04AT Datasheet (PDF)

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TTD50P04AT

TTD50P04AT Wuxi Unigroup Microelectronics CO.,LTD. 40V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -40V Low RDS(ON) ID (at VGS =-10V) -50A Simple driver requirement RDS(ON) (at VGS =-10V)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: ECH8695R | NP48N055DHE | AP3P7R0EMT | 2SK2232 | BSO204P | IVN5000ANH | CS7N60FA9R

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