All MOSFET. TTD50P04AT Datasheet

 

TTD50P04AT MOSFET. Datasheet pdf. Equivalent


   Type Designator: TTD50P04AT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO252

 TTD50P04AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TTD50P04AT Datasheet (PDF)

 ..1. Size:745K  cn wuxi unigroup
 ttd50p04at.pdf

TTD50P04AT TTD50P04AT

TTD50P04AT Wuxi Unigroup Microelectronics CO.,LTD. 40V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -40V Low RDS(ON) ID (at VGS =-10V) -50A Simple driver requirement RDS(ON) (at VGS =-10V)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: S-L2N7002SWT1G

 

 
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