TTD60N03QT Specs and Replacement

Type Designator: TTD60N03QT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: TO252

TTD60N03QT substitution

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TTD60N03QT datasheet

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TTD60N03QT

TTD60N03QT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description Product Summary VDS 30V Trench Power technology ID (at VGS =10V) 60A Low Capacitance RDS(ON) (at VGS =10V) ... See More ⇒

Detailed specifications: TTP160N03GT, TTD18P10AT, TTP18P10AT, TTD20N04AT, TTD30P03AT, TTD35N02AV, TTD40P03AT, TTD50P04AT, IRFP250, TTD65N04AT, TTD70N04AT, TTP70N04AT, TTD85N03AT, TTD90N03AT, TTP90N03AT, TTD90P03AT, TTG160N03AT

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.