All MOSFET. TTD60N03QT Datasheet

 

TTD60N03QT MOSFET. Datasheet pdf. Equivalent


   Type Designator: TTD60N03QT
   Marking Code: 60N03QT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 17.5 nC
   trⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO252

 TTD60N03QT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TTD60N03QT Datasheet (PDF)

 ..1. Size:689K  cn wuxi unigroup
 ttd60n03qt.pdf

TTD60N03QT TTD60N03QT

TTD60N03QT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description Product Summary VDS 30V Trench Power technology ID (at VGS =10V) 60A Low Capacitance RDS(ON) (at VGS =10V)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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