All MOSFET. TTD60N03QT Datasheet

 

TTD60N03QT Datasheet and Replacement


   Type Designator: TTD60N03QT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO252
 

 TTD60N03QT substitution

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TTD60N03QT Datasheet (PDF)

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TTD60N03QT

TTD60N03QT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description Product Summary VDS 30V Trench Power technology ID (at VGS =10V) 60A Low Capacitance RDS(ON) (at VGS =10V)

Datasheet: TTP160N03GT , TTD18P10AT , TTP18P10AT , TTD20N04AT , TTD30P03AT , TTD35N02AV , TTD40P03AT , TTD50P04AT , IRFP250 , TTD65N04AT , TTD70N04AT , TTP70N04AT , TTD85N03AT , TTD90N03AT , TTP90N03AT , TTD90P03AT , TTG160N03AT .

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