TTD70N04AT MOSFET. Datasheet pdf. Equivalent
Type Designator: TTD70N04AT
Marking Code: 70N04AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 57 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 251 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
Package: TO252
TTD70N04AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TTD70N04AT Datasheet (PDF)
..1. Size:449K cn wuxi unigroup
ttd70n04at ttp70n04at.pdf
ttd70n04at ttp70n04at.pdf
TTD70N04AT, TTP70N04AT Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and In
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