All MOSFET. TTD70N04AT Datasheet

 

TTD70N04AT MOSFET. Datasheet pdf. Equivalent


   Type Designator: TTD70N04AT
   Marking Code: 70N04AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 57 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 251 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: TO252

 TTD70N04AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TTD70N04AT Datasheet (PDF)

 ..1. Size:449K  cn wuxi unigroup
 ttd70n04at ttp70n04at.pdf

TTD70N04AT TTD70N04AT

TTD70N04AT, TTP70N04AT Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and In

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 4N70K | IXTN60N50L2 | MDF13N65B | GWM180-004X2-SL

 

 
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