TTD70N04AT Specs and Replacement

Type Designator: TTD70N04AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 251 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm

Package: TO252

TTD70N04AT substitution

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TTD70N04AT datasheet

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TTD70N04AT

TTD70N04AT, TTP70N04AT Wuxi Unigroup Microelectronics Company Wuxi Unigroup Microelectronics Company 40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and In... See More ⇒

Detailed specifications: TTP18P10AT, TTD20N04AT, TTD30P03AT, TTD35N02AV, TTD40P03AT, TTD50P04AT, TTD60N03QT, TTD65N04AT, 2SK3568, TTP70N04AT, TTD85N03AT, TTD90N03AT, TTP90N03AT, TTD90P03AT, TTG160N03AT, TTG160N03GT, TTG65N10A

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