All MOSFET. TTD85N03AT Datasheet

 

TTD85N03AT Datasheet and Replacement


   Type Designator: TTD85N03AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 307 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO252
 

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TTD85N03AT Datasheet (PDF)

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TTD85N03AT

TTD85N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 30V Low RDS(ON) ID (at VGS =10V) 85A Low Gate Charge RDS(ON) (at VGS =10V)

Datasheet: TTD30P03AT , TTD35N02AV , TTD40P03AT , TTD50P04AT , TTD60N03QT , TTD65N04AT , TTD70N04AT , TTP70N04AT , 5N60 , TTD90N03AT , TTP90N03AT , TTD90P03AT , TTG160N03AT , TTG160N03GT , TTG65N10A , TTG90P03ATC , TTJ12P03AT .

History: RSS120N03TB | TTD60N03QT

Keywords - TTD85N03AT MOSFET datasheet

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