TTD85N03AT Specs and Replacement

Type Designator: TTD85N03AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 307 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO252

TTD85N03AT substitution

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TTD85N03AT datasheet

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TTD85N03AT

TTD85N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 30V Low RDS(ON) ID (at VGS =10V) 85A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

Detailed specifications: TTD30P03AT, TTD35N02AV, TTD40P03AT, TTD50P04AT, TTD60N03QT, TTD65N04AT, TTD70N04AT, TTP70N04AT, 5N60, TTD90N03AT, TTP90N03AT, TTD90P03AT, TTG160N03AT, TTG160N03GT, TTG65N10A, TTG90P03ATC, TTJ12P03AT

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.