TTG160N03AT Specs and Replacement

Type Designator: TTG160N03AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 51 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 1320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: DFN5X6

TTG160N03AT substitution

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TTG160N03AT datasheet

 ..1. Size:685K  cn wuxi unigroup
 ttg160n03at.pdf pdf_icon

TTG160N03AT

TTG160N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 30V Low RDS(ON) ID (at VGS =10V) 160A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

 5.1. Size:415K  cn wuxi unigroup
 ttg160n03gt.pdf pdf_icon

TTG160N03AT

TTG160N03GT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information ... See More ⇒

Detailed specifications: TTD60N03QT, TTD65N04AT, TTD70N04AT, TTP70N04AT, TTD85N03AT, TTD90N03AT, TTP90N03AT, TTD90P03AT, 18N50, TTG160N03GT, TTG65N10A, TTG90P03ATC, TTJ12P03AT, TTK8205, TTK8205A, TTP115N68A, TTP88N08A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.