All MOSFET. TTG160N03GT Datasheet

 

TTG160N03GT MOSFET. Datasheet pdf. Equivalent


   Type Designator: TTG160N03GT
   Marking Code: 160N03GT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 119 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 160 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 904 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
   Package: DFN5X6

 TTG160N03GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TTG160N03GT Datasheet (PDF)

 ..1. Size:415K  cn wuxi unigroup
 ttg160n03gt.pdf

TTG160N03GT TTG160N03GT

TTG160N03GT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information

 5.1. Size:685K  cn wuxi unigroup
 ttg160n03at.pdf

TTG160N03GT TTG160N03GT

TTG160N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 30V Low RDS(ON) ID (at VGS =10V) 160A Low Gate Charge RDS(ON) (at VGS =10V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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