TTG160N03GT Datasheet and Replacement
Type Designator: TTG160N03GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 119 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 904 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
Package: DFN5X6
TTG160N03GT substitution
TTG160N03GT Datasheet (PDF)
ttg160n03gt.pdf

TTG160N03GT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information
ttg160n03at.pdf

TTG160N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 30V Low RDS(ON) ID (at VGS =10V) 160A Low Gate Charge RDS(ON) (at VGS =10V)
Datasheet: TTD65N04AT , TTD70N04AT , TTP70N04AT , TTD85N03AT , TTD90N03AT , TTP90N03AT , TTD90P03AT , TTG160N03AT , 2N60 , TTG65N10A , TTG90P03ATC , TTJ12P03AT , TTK8205 , TTK8205A , TTP115N68A , TTP88N08A , TTX2301A .
History: WMB080N10LG2
Keywords - TTG160N03GT MOSFET datasheet
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TTG160N03GT replacement
History: WMB080N10LG2



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