TTG160N03GT MOSFET Datasheet: N-Ch, 30V, 160A. Full specification with pinout and replacement list

TTG160N03GT Specs and Replacement

Type Designator: TTG160N03GT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 119 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 904 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: DFN5X6

TTG160N03GT substitution

- MOSFET ⓘ Cross-Reference Search

TTG160N03GT datasheet

..1. Size:415K cn wuxi unigroup
ttg160n03gt.pdf pdf_icon

TTG160N03GT Wuxi Unigroup Microelectronics Company 30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information ... See More ⇒

5.1. Size:685K cn wuxi unigroup
ttg160n03at.pdf pdf_icon

TTG160N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 30V Low RDS(ON) ID (at VGS =10V) 160A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

Detailed specifications: TTD65N04AT , TTD70N04AT , TTP70N04AT , TTD85N03AT , TTD90N03AT , TTP90N03AT , TTD90P03AT , TTG160N03AT , 20N50 , TTG65N10A , TTG90P03ATC , TTJ12P03AT , TTK8205 , TTK8205A , TTP115N68A , TTP88N08A , TTX2301A .