TTG65N10A Specs and Replacement

Type Designator: TTG65N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 182 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: DFN5X6

TTG65N10A substitution

- MOSFET ⓘ Cross-Reference Search

 

TTG65N10A datasheet

 ..1. Size:603K  cn wuxi unigroup
 ttg65n10a.pdf pdf_icon

TTG65N10A

TTG65N10A Wuxi Unigroup Microelectronics CO.,LTD. 100V N-Channel Trench MOSFET(Preliminary) Product Summary General Description VDS 100V Trench Power Technology Low RDS(ON) ID (at VGS=10V) 65A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: TTD70N04AT, TTP70N04AT, TTD85N03AT, TTD90N03AT, TTP90N03AT, TTD90P03AT, TTG160N03AT, TTG160N03GT, IRF520, TTG90P03ATC, TTJ12P03AT, TTK8205, TTK8205A, TTP115N68A, TTP88N08A, TTX2301A, TTX2302

Keywords - TTG65N10A MOSFET specs

 TTG65N10A cross reference

 TTG65N10A equivalent finder

 TTG65N10A pdf lookup

 TTG65N10A substitution

 TTG65N10A replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility