All MOSFET. TTG65N10A Datasheet

 

TTG65N10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: TTG65N10A
   Marking Code: 65N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 54 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 97 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 182 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: DFN5X6

 TTG65N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TTG65N10A Datasheet (PDF)

 ..1. Size:603K  cn wuxi unigroup
 ttg65n10a.pdf

TTG65N10A TTG65N10A

TTG65N10A Wuxi Unigroup Microelectronics CO.,LTD. 100V N-Channel Trench MOSFET(Preliminary) Product Summary General Description VDS 100V Trench Power Technology Low RDS(ON) ID (at VGS=10V) 65A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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