All MOSFET. TTG65N10A Datasheet

 

TTG65N10A Datasheet and Replacement


   Type Designator: TTG65N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 182 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: DFN5X6
 

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TTG65N10A Datasheet (PDF)

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TTG65N10A

TTG65N10A Wuxi Unigroup Microelectronics CO.,LTD. 100V N-Channel Trench MOSFET(Preliminary) Product Summary General Description VDS 100V Trench Power Technology Low RDS(ON) ID (at VGS=10V) 65A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: TTD70N04AT , TTP70N04AT , TTD85N03AT , TTD90N03AT , TTP90N03AT , TTD90P03AT , TTG160N03AT , TTG160N03GT , CS150N03A8 , TTG90P03ATC , TTJ12P03AT , TTK8205 , TTK8205A , TTP115N68A , TTP88N08A , TTX2301A , TTX2302 .

Keywords - TTG65N10A MOSFET datasheet

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