All MOSFET. TTJ12P03AT Datasheet

 

TTJ12P03AT Datasheet and Replacement


   Type Designator: TTJ12P03AT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 222 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm
   Package: SOP8
 

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TTJ12P03AT Datasheet (PDF)

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TTJ12P03AT

TTJ12P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =-10V) -12A Low Gate Charge RDS(ON) (at VGS =-10V)

Datasheet: TTD85N03AT , TTD90N03AT , TTP90N03AT , TTD90P03AT , TTG160N03AT , TTG160N03GT , TTG65N10A , TTG90P03ATC , IRF2807 , TTK8205 , TTK8205A , TTP115N68A , TTP88N08A , TTX2301A , TTX2302 , TTX2302A , TTX2305A .

History: UF640G-TQ2-R | TTG65N10A

Keywords - TTJ12P03AT MOSFET datasheet

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