TTJ12P03AT Datasheet and Replacement
Type Designator: TTJ12P03AT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 222 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm
Package: SOP8
TTJ12P03AT substitution
TTJ12P03AT Datasheet (PDF)
ttj12p03at.pdf

TTJ12P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =-10V) -12A Low Gate Charge RDS(ON) (at VGS =-10V)
Datasheet: TTD85N03AT , TTD90N03AT , TTP90N03AT , TTD90P03AT , TTG160N03AT , TTG160N03GT , TTG65N10A , TTG90P03ATC , IRFZ24N , TTK8205 , TTK8205A , TTP115N68A , TTP88N08A , TTX2301A , TTX2302 , TTX2302A , TTX2305A .
History: TTP88N08A | TTG90P03ATC | TTK8205A | TTP115N68A
Keywords - TTJ12P03AT MOSFET datasheet
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History: TTP88N08A | TTG90P03ATC | TTK8205A | TTP115N68A



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