TTJ12P03AT MOSFET. Datasheet pdf. Equivalent
Type Designator: TTJ12P03AT
Marking Code: 12P03AT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 41 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 222 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm
Package: SOP8
TTJ12P03AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TTJ12P03AT Datasheet (PDF)
..1. Size:825K cn wuxi unigroup
ttj12p03at.pdf
ttj12p03at.pdf
TTJ12P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =-10V) -12A Low Gate Charge RDS(ON) (at VGS =-10V)
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
