All MOSFET. TTJ12P03AT Datasheet

 

TTJ12P03AT MOSFET. Datasheet pdf. Equivalent


   Type Designator: TTJ12P03AT
   Marking Code: 12P03AT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 222 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm
   Package: SOP8

 TTJ12P03AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TTJ12P03AT Datasheet (PDF)

 ..1. Size:825K  cn wuxi unigroup
 ttj12p03at.pdf

TTJ12P03AT TTJ12P03AT

TTJ12P03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS -30V Low RDS(ON) ID (at VGS =-10V) -12A Low Gate Charge RDS(ON) (at VGS =-10V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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