TTP88N08A MOSFET. Datasheet pdf. Equivalent
Type Designator: TTP88N08A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 174 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 88 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 100 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 263 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220
TTP88N08A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TTP88N08A Datasheet (PDF)
ttp88n08a.pdf
TTP88N08A Wuxi Unigroup Microelectronics CO.,LTD. 82V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 82V Low RDS(ON) ID (at VGS =10V) 88A Low Gate Charge RDS(ON) (at VGS =10V)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: FDS4935A
History: FDS4935A
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918