TTP88N08A Specs and Replacement

Type Designator: TTP88N08A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 174 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 88 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 263 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO220

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TTP88N08A datasheet

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TTP88N08A

TTP88N08A Wuxi Unigroup Microelectronics CO.,LTD. 82V N-Channel Trench MOSFET(Preliminary) General Description Product Summary Trench Power technology VDS 82V Low RDS(ON) ID (at VGS =10V) 88A Low Gate Charge RDS(ON) (at VGS =10V) ... See More ⇒

Detailed specifications: TTG160N03AT, TTG160N03GT, TTG65N10A, TTG90P03ATC, TTJ12P03AT, TTK8205, TTK8205A, TTP115N68A, P60NF06, TTX2301A, TTX2302, TTX2302A, TTX2305A, TTX2312A, TTX2N7002KA, TTX3401A, VBB1630

Keywords - TTP88N08A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.